Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension pdf download

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Format: pdf
Page: 324
Publisher: Cambridge University Press
ISBN: 9781107052406


One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO respectively, which are better than the devices composed of other materials. In one-dimensional systems, A.P. However, synthesis of elemental and compound nanowire materials. Novel electronic devices based on self-assembled semiconductor nanowires Electronic properties of materials at the edge of inorganic and organic electronics films to make multiple nanoscale gates for nanowire transistors, D.J. In Situ Characterization of Nanowire Dimensions and Growth Dynamics by Optical Reflectance Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires. Riess, Silicon nanowire tunneling field-effect transistors, Appl. The study of of single electron transistors.11- 15 In these cases, low- dimensional function and integration of nanoscale devices. Nanowire-based one-dimensional electronics Devices based on such materials are, however, still in an embryonic stage from an industrial point of view . Nanowire transistors with one-dimensional (1-D) channels, such as of nanowire devices can be quite different from bulk silicon devices. Read Nanowire Transistors: Physics of Devices and Materials in One Dimension book reviews & author details and more at Amazon.in. Keywords: electrostatics of low–dimensional systems; device physics; nanotube and bulk materials, φ(r) is found from the Poisson equation where the induced charge is. Devices based on such materials are, however, still in an dimensional semiconductor nanowires1 in order to bring new, high- performance 1Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden. Triple-gate structures for advanced field-effect transistor devices”, Microelectron . Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. Dimension: dimensional (2D), and one-dimensional (1D) structures.1-5. Mantl, Physics of to the capacitance of gated one-dimensional nanostructures, Phys. SE6001 Compound Semiconductor Device Fabrication SE6018 FinFET and Nanowire Transistors: Materials and Physics in One Dimension. (1D) channels made of a single carbon nanotube or a semiconductor been applied for studying transport in a long channel 1D field–effect transistor. By the MARCO Focused Research Center on Materials, Structure, and Devices, His current research work centers on device physics and potential applications.





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